View RMPA29200_4197514.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

RMPA29200
June 2004
RMPA29200
29-31 GHZ 2 Watt Power Amplifier MMIC
General Description
The Fairchild Semiconductor's RMPA29200 is a high efficiency power amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA29200 is a 3-stage GaAs MMIC amplifier utilizing our advanced 0.15m gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
* 17dB small signal gain (typ.) * 33dBm saturated power out (typ.) * DC Bias connections on top or bottom side * Circuit contains individual source vias * Chip size 4.00mm x 2.98mm
Device
Absolute Ratings
Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+5V Typical) Negative DC Voltage Simultaneous (Vd-Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 +8 2450 +22 -30 to +85 -55 to +125 5.6 Units V V V mA dBm C C C/W
(c)2004 Fairchild Semiconductor Corporation
RMPA29200 Rev. D
RMPA29200
Electrical Characteristics (At 25C), 50 system, Vd = +5V, Quiescent current (Idq) = 1500mA
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal (Pin = 0dBm) Gain Variation vs. Frequency Power Output at 1dBm Compression Power Output Saturated: (Pin = +19dBm) Drain Current at Pin = 0dBm Drain Current at P1dB Compression Power Added Efficiency (PAE): at P1dB OIP3 (26dBm/Tone) Input Return Loss (Pin = 0dBm) Output Return Loss (Pin = 0dBm)
Note: 1. Typical range of negative gate voltages is -1.0 to 0.0V to set typical Idq of 1500 mA.
Min 29 14.5
Typ -0.2 17 0.5 32.5 33 1500 1780 20 38 12 10
Max 31
32
Units GHz V dB dB dBm dBm mA mA % dBm dB dB
(c)2004 Fairchild Semiconductor Corporation
RMPA29200 Rev. D
RMPA29200
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3mils wide and 0.5mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2mil gap between the chip and the substrate material.
GATE SUPPLY (Vg)
MMIC CHIP
RF IN
RF OUT
GROUND (Back of the Chip)
DRAIN SUPPLY (Vd)
Figure 1. Functional Block Diagram
2.997 2.812 2.714
1.692 1.492 1.292
0.270 0.172 0.0 0.0 0.454 1.422 2.513 3.891 4.000
Dimensions in mm
Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 4.000mm x 2.997mm x 50m. Back of chip is RF and DC Ground)
(c)2004 Fairchild Semiconductor Corporation
RMPA29200 Rev. D
RMPA29200
GATE SUPPLY (-Vg) 0.1F
100pF BOND WIRE Ls
MMIC CHIP
RF IN
RF OUT
100pF GROUND (Back of Chip) 0.01F
100pF
100pF BOND WIRE Ls
0.01F
0.01F
DRAIN SUPPLY (Vd = +5V)
Figure 3. Recommended Application Schematic and Circuit Diagram
(c)2004 Fairchild Semiconductor Corporation
RMPA29200 Rev. D
RMPA29200
DIE-ATTACH 80Au/20Sn 2 MIL GAP
5 MIL THICK ALUMINA 50
5 MIL THICK ALUMINA 50
RF INPUT
RF OUTPUT
100pF
100pF
100pF
100pF L < 0.015" (4 Places)
0.01F
0.01F
0.01F
0.01F
Vg (NEGATIVE)
Vd (POSITIVE)
MMIC has Vg and Vd bias pads accessible on both top and bottom sides. DC bias connections are required only on one side. Note: Use 0.003" by 0.0005" gold ribbon or 1 mil gold wire for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Figure 4. Recommended Assembly and Bonding Diagram
(c)2004 Fairchild Semiconductor Corporation
RMPA29200 Rev. D
RMPA29200
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier. Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +5V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 1500mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg).
(c)2004 Fairchild Semiconductor Corporation
RMPA29200 Rev. D
RMPA29200
Typical Characteristics
25 20 15 S21, S11, S22 (dB) 10 5 0 -5
S11 S22
RMPA29200 S21, S22 Mag vs. Frequency Bias Vd = 5V, Idq = 1500mA, T = 25C
S21
0 5 0 20 22 24 26 28 30 32 34 36 FREQUENCY (GHz)
34
RMPA29200 P1dB vs. Frequency vs. Temperature Vd = 5V, Idq = 1500mA
-30C
33 32 P1dB (dBm)
+25C
+85C
31
30 29
28 26 27 28 29 FREQUENCY (GHz) 30 31 32
RMPA29200 Power Out vs. Power In Vd = 5V, Idq = 1500mA, T = 25C
36 34 32 POWER OUT (dBm) 30 28 26 24 22 20 18 -2 0 2 4 6 8 10 12 14 16 18 POWER IN (dBm)
(c)2004 Fairchild Semiconductor Corporation RMPA29200 Rev. D
29 GHz 30 GHz 31 GHz 28 GHz
RMPA29200
Typical Characteristics (Continued)
RMPA29200 Gain vs. Power In Vd = 5V, Idq = 1500mA, T = 25C
21 20 19 GAIN (dB) 18 17 16 15 14 -2 0 2 4 6 8 10 12 14 16 18 POWER IN (dBm)
31 GHz 30 GHz 29 GHz
28 GHz
42 40
RMPA29200 Two-Tone OIP3 vs. Output Power/Tone Vd = 5V, Idq = 1500mA, T = 25C
30 GHz 29 GHz
38 OIP3L (dBm) 36 34 32 30 28
31 GHz
10
12
14
16
18
20
22
24
26
28
30
OUTPUT POWER/TONE (dBm)
RMPA29200 in Balance Pair Configuation with MMIC Driver
RMDA29000 POWER AMP (2)
RMDA29000 DRIVER AMP
RF IN 2.4mm RF OUT WG
(c)2004 Fairchild Semiconductor Corporation
RMPA29200 Rev. D
RMPA29200
Typical Characteristics (Continued)
RMPA29200 Balanced Pair with RMDA29000 Driver Power Out vs. Power In T = 25C
38
28 GHz
36 34 POWER OUT (dBm) 32 30 28 26 24 22 20 -16 -14 -12 -10 -8 -6 -4 -2 0 2
29 GHz 30 GHz
29 GHz 31 GHz
Vd = 5V RMPA29200 Idq = 1560mA RMDA29000 Idq = 250mA
4
6
POWER IN (dBm)
RMPA29200 Balanced Pair with RMDA29000 Drive Amp P1dB vs. Frequency T = 25C
35 34.5 34 P1dB (dB) 33.5 33 32.5 32 31.5 26 27 28 29 FREQUENCY (GHz) 30 31 32
Vd = 5V RMPA29200 Idq = 1560mA RMDA29000 Idq = 250mA
RMPA29200 Balanced Pair with RMDA29000 Driver Amp OIP3 vs. Pout F = 29GHz. T = 25C
41
40
OIP3 (dBm)
39
OIP3U OIP3L
38
37
Vd = 5V RMPA29200 Idq = 1560mA RMDA29000 Idq = 250mA
36 28 29 30 31 32 33 34 35
POWER OUT (dBm)
(c)2004 Fairchild Semiconductor Corporation RMPA29200 Rev. D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM
Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

▲Up To Search▲

Price & Availability of RMPA29200

	To Download RMPA29200 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .